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Elena Borovitskaya

Lecturer
Ph.D.,
Institute of Applied Physics, Nizhnii Novgorod, Russia

Office: BA228
Phone: 215-204-7657
Fax:215-204-5652
Email:elenab@temple.edu

 


Selected Publications:

"Low Frequency Noise in Degenerate Semiconductors", A. P. Dimitriev, E. Borovitskaya, M. E. Levinstein, S. L. Rumyantsev and M. S. Shur, J. of app. Phys., 90, no. 1, p. 301-305 (2001).

"High Magnetic Field Studies of AlGaN/GaN Heterostructure Grown on Bulk GaN, SiC and Sapphire Substrates", W. Knap, E. Borovitskaya, M. Shur and R. Gaska et al, MRS Proceedings, 639, G7.3 (2001).

"On Theory of l/f Noise in Semiconductors", E. Borovitskaya and M. S. Shur, Solid State Electronics, 45, p. 1067-1069 (2001)

"Two-dimensional electron gas scattering mechanisms in AlGaN/GaN Heterostructures", E. Borovitskaya, W. Knap, M. Shur, R. Gaska, MRS Proceedings, 639, G7.5 (2001).

"Low Frequency Noise in Degenerate Semiconductors", A. P. Dimitriev, E. Borovitskaya, M. E. Levinstein, S. L. Rumyantsev and M. S. Shur, J. of app. Phys., 90, no. 1, p. 301-305 (2001).

"High Magnetic Field Studies of AlGaN/GaN Heterostructure Grown on Bulk GaN, SiC and Sapphire Substrates", W. Knap, E. Borovitskaya, M. Shur and R. Gaska et al, MRS Proceedings, 639, G7.3 (2001).

"On Theory of l/f Noise in Semiconductors", E. Borovitskaya and M. S. Shur, Solid State Electronics, 45, p. 1067-1069 (2001)

"Two-dimensional electron gas scattering mechanisms in AlGaN/GaN Heterostructures", E. Borovitskaya, W. Knap, M. Shur, R. Gaska, MRS Proceedings, 639, G7.5 (2001).

"Low Frequency Noise in GaN/AlGaN Heterostructure Field-Effect transistors at Cryogenic Temperatures", S. L. Rumyantsev, Y. Deng, E. Borovitskaya, A. Dmitriev, W. Knap, N. Pala and M. S. Shur, Journ. of Appl. Phys., 92, no. 8, 4726-4730 (2002).

"Acoustic Phonon Scatering of Two-dimensional Electrons in GaN/AlGaN Heterostructures", W. Knap, E. Borovitskaya, M. S. Shur, Appl. Phys. Lett. (AIP) 80, no. 7, 1228-30 (2002).

"Low-dimensional Systems", E. Borovitskaya, M. S. Shur, International Journal of High Speed Electronics and Systems, 12, p. 1-14 (2002).

"Low Frequency Noise in GaN/AlGaN Heterostructure Field-Effect transistors at Cryogenic Temperatures", S. L. Rumyantsev, Y. Deng, E. Borovitskaya, A. Dmitriev, W. Knap, N. Pala and M. S. Shur, Journ. of Appl. Phys., 92, no. 8, 4726-4730 (2002).

"Acoustic Phonon Scatering of Two-dimensional Electrons in GaN/AlGaN Heterostructures", W. Knap, E. Borovitskaya, M. S. Shur, Appl. Phys. Lett. (AIP) 80, no. 7, 1228-30 (2002).

"Low-dimensional Systems", E. Borovitskaya, M. S. Shur, International Journal of High Speed Electronics and Systems, 12, p. 1-14 (2002).

 

 

 

Last modified 7/18/06

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