Nonlinear Optical Spectroscopy of Semiconductor-Oxide Interfaces

Semiconductor Oxide Interfaces are a key component of microelectronic circuits. Of particular interest are interface states that can act as traps and degrade device performance. We use ultrafast lasers and nonlinear optical techniques to probe the semiconductor interface.

 

Research Highlights

 IR-SHG Spectrum of Ge/GeO2

 Ultrafast Carrier Relaxation Dynamics

 Photomodulation SHG.

 

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